dmg1016v q document number: ds 37972 rev. 2 - 2 1 of 9 www.diodes.com september 2015 ? diodes incorporated dmg1016v q new product advanced information complementary pair enhancement mode mosfet product summary device b v dss r ds(on) max i d max t a = +25c q1 2 0v 0.4 @ v gs = 4. 5 v 870 ma 0.5 @ v gs = 2 .5v 7 80ma 0.7 @ v gs = 1.8 v 640 ma q2 - 2 0v 0.7 @ v gs = - 4. 5 v - 640 ma 0.9 @ v gs = - 2 .5v - 5 80ma 1.3 @ v gs = - 1.8 v - 4 65ma description and applications this mosfet is designed to minimize the on - state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? swi tch es features ? low on - resistance ? low gate threshold voltage v gs(th) <1v ? low input capacitance ? fast switching speed ? low input/output leakage ? complementary pair mosfet ? ultra - small surface mount package ? esd protected gate to 2.5kv hbm ? totally lead - free & f ully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: sot - 563 ? case material: molded plastic, green molding compound; ul fl ammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminal finish - matte tin a nnealed over copper leadframe ; solderable per mil - std - 202, method 208 ? weight: 0.006 grams ( a pproximate) ordering information (note 5) part number case packaging dmg1016v q - 7 sot - 563 3 , 000/tape & reel dmg1016v q - 13 sot - 563 10 , 000/tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "gree n" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . a utomotive products are aec - q101 qualified and are ppap capable. automotive, aec - q101 and standard products are electrically and thermally the same, except where specified. for more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5 . for packaging details, go to our website at http : //www.diodes.com/products/packages.html . marking information date code key year 2009 2010 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 code w x y z a b c d e f g h month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot - 563 top view top view internal schematic bottom view ca1 = product type marking code ym = date code marking y = year (ex: w = 2009) m = month (ex: 9 = september) s 2 d 2 q 1 q 2 d 1 s 1 g 2 g 1 esd protected to 2.5kv hbm ca1 ym
dmg1016v q document number: ds 37972 rev. 2 - 2 2 of 9 www.diodes.com september 2015 ? diodes incorporated dmg1016v q new product advanced information maximum ratings (q1 n - channel) ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain source voltage v dss 20 v gate - source voltage v gss ? a = + 25c t a = + 85c i d 8 70 63 0 ma maximum ratings ( q2 p - channel) ( @t a = +25c , unless otherwise specified.) characteristic symbol value unit drain source voltage v dss - 20 v gate - source voltage v gss ? 6 v drain current (note 6 ) t a = + 25c t a = + 85c i d - 640 - 460 ma thermal characteristics characteristic symbol value unit power dissipation (note 6 ) p d 530 mw thermal resista nce, junction to ambient (note 6) r ja 235 c/w operating and storage temperature range t j , t stg - 5 5 to +150 c
dmg1016v q document number: ds 37972 rev. 2 - 2 3 of 9 www.diodes.com september 2015 ? diodes incorporated dmg1016v q new product advanced information electrical characteristics (q1 n - channel) ( @t a = +25c , unless otherwise specified.) characteristic symbol min typ max unit test condition off characteris tics (note 7 ) drain - source breakdown voltage bv dss 20 ? ? gs = 0v, i d = 250 a zero gate voltage drain current i dss ? ? v ds = 20 v, v gs = 0v gate - source leakage i gss ? ? ? v gs = 4.5v, v ds = 0v on characteristics (note 7 ) gate thresho ld voltage v gs(th) 0.5 ? ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) ? ? ? ? ? ? gs = 4.5v, i d = 600 ma v gs = 2.5v, i d = 500ma v gs = 1.8v, i d = 350ma forward transfer admittance |y fs | ? ? ds =10v, i d = 400m a diode forward voltage (note 7 ) v sd ? gs = 0v, i s = 1 50 ma dynamic characteristics input capacitance c iss ? ? ds = 16v, v gs = 0v f = 1.0mhz output capacitance c oss ? ? rss ? ? g ? ? ? ? gs = 4.5v, v ds = 10v, i d = 250ma gate - source charge q gs ? ? ? ? gd ? ? ? ? d(on) ? ? ? ? dd = 1 0 v, v g s = 4.5 v, r l = 47 ? ?? g = 10 ? ?? ? d = 200m a turn - on rise time t r ? ? ? ? d(off) ? ? ? ? f ? ? ? ? electrical characteristics ( q2 p - channel) ( @t a = +25c , unless otherwise specified.) characteristic symbol min typ max unit test condition off charact eristics (note 7 ) drain - source breakdown voltage bv dss - 20 ? ? gs = 0v, i d = - 250 a zero gate voltage drain current i dss ? ? v ds = - 20v, v gs = 0v gate - source leakage i gss ? ? ? v gs = 4.5v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs(th) - 0.5 ? ds = v gs , i d = - 250 a static drain - source on - resistance r ds (on) ? ? gs = - 4.5v, i d = - 430ma v gs = - 2.5v, i d = - 300ma v gs = - 1.8v, i d = - 150ma forward transfer admittance |y fs | ? ? ds =10v, i d = - 250m a diode forward voltage (note 7 ) v sd ? gs = 0v, i s = - 150 ma dynamic characteristics input capacitance c iss ? ? ds = - 16v, v gs = 0v f = 1.0mhz output capacitance c oss ? ? rss ? ? g ? ? ? ? gs = - 4.5v, v ds = - 10v, i d = - 250ma gate - source charge q gs ? ? ? ? gd ? ? ? ? d(on) ? ? ? ? dd = - 10v, v gs = - 4.5v, r l = 47 ? ?? g = 10 ? ?? ? d = - 200ma turn - on rise time t r ? ? ? ? d(off) ? ? ? ? f ? ? ? ? notes: 6 . device mounted on fr - 4 pcb. 7. short duration pulse test used to minimize self - heating effect.
dmg1016v q document number: ds 37972 rev. 2 - 2 4 of 9 www.diodes.com september 2015 ? diodes incorporated dmg1016v q new product advanced information typical characteristics (q1 n - channel) 0 0.2 0.4 0.6 0.8 1.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 fig. 1 typical output characteristic v , drain-source voltage (v) ds i , d r a i n c u r r e n t ( a ) d v = 1.5v gs v = 2.0v gs v = 2.5v gs v = 3.0v gs v = 1.2v gs v = 4.5v gs v = 8.0v gs 0 0.2 0.4 0.6 0.8 1.0 0 0.5 1 1.5 2 fig. 2 typical transfer characteristic v , gate-source voltage (v) gs i , d r a i n c u r r e n t ( a ) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.2 0.4 0.6 0.8 1.0 fig. 3 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 4.5v gs v = 2.5v gs v = 1.8v gs 0 0.1 0.2 0.3 0.4 0.5 0 0.2 0.4 0.6 0.8 1.0 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0.5 0.7 0.9 1.1 1.3 1.5 1.7 fig. 5 on-resistance variation with temperature -50 -25 0 v = 2.5v i = 250ma gs d 25 50 75 100 125 150 t , ambient temperature (c) a r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s o n v = 4.5v i = 500ma gs d 0 0.2 0.4 0.6 0.8 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s o n ? v = 4.5v i = 500ma gs d v = 2.5v i = 250ma gs d
dmg1016v q document number: ds 37972 rev. 2 - 2 5 of 9 www.diodes.com september 2015 ? diodes incorporated dmg1016v q new product advanced information typical characteristics (q1 n - channel) (continued) 0 0.4 0.8 1.2 1.6 fig. 7 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = 1ma d i = 250a d 0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 8 diode forward voltage vs. current v , source-drain voltage (v) sd i , s o u r c e c u r r e n t ( a ) s t = 25c a 1 10 100 0 20 fig. 9 typical total capacitance v , drain-source voltage (v) ds 5 15 10 c , c a p a c i t a n c e ( p f ) c iss c rss c oss 1 10 100 1,000 0 4 8 12 16 20 fig. 10 typical leakage current vs. drain-source voltage v , drain-source voltage (v) ds i , l e a k a g e c u r r e n t ( n a ) d s s t = 25c a t = 85c a t = 125c a t = 150c a 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 fig. 11 transient thermal response t , pulse duration time (s) 1 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t - t = p * r (t) duty cycle, d = t /t j a ja 12 ? r (t) = r(t) * ? ja r r = 260c/w ? ? ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
dmg1016v q document number: ds 37972 rev. 2 - 2 6 of 9 www.diodes.com september 2015 ? diodes incorporated dmg1016v q new product advanced information typical characteristics ( q2 p - channel) 0 0.2 0.4 0.6 0.8 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5 fig. 12 typical output characteristic -v , drain-source voltage (v) ds v = -2.0v gs v = -4.5v gs v = -3.0v gs v = -1.5v gs v = -8.0v gs v = -2.5v gs 0 0.2 0.4 0.6 0.8 1.0 0 0.5 1.0 1.5 2.0 2.5 3.0 fig. 13 typical transfer characteristic -v , gate-source voltage (v) gs - i , d r a i n c u r r e n t ( a ) d t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -5v ds 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.2 0.4 0.6 0.8 1.0 fig. 14 typical on-resistance vs. drain current and gate voltage -i , drain-source current (a) d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -4.5v gs v = -2.5v gs v = -1.8v gs 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 -i , drain current (a) d fig. 15 typical on-resistance vs. drain current and temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a v = -4.5v gs 0.5 0.7 0.9 1.1 1.3 1.5 1.7 fig. 16 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s o n v = -4.5v i = -500ma gs d v = -2.5v i = -250ma gs d 0 0.2 0.4 0.6 0.8 1.0 fig. 17 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s o n ? v = -4.5v i = -500ma gs d v = -2.5v i = -250ma gs d
dmg1016v q document number: ds 37972 rev. 2 - 2 7 of 9 www.diodes.com september 2015 ? diodes incorporated dmg1016v q new product advanced information typical char acteristics ( q2 p - channel) (continued) 0 0.4 0.8 1.2 1.6 fig. 18 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a - v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = -250a d i = -1ma d 0 0.2 0.4 0.6 0.8 1.0 0.2 0.4 0.6 0.8 1.0 1.2 fig. 19 diode forward voltage vs. current -v , source-drain voltage (v) sd - i , s o u r c e c u r r e n t ( a ) s t = 25c a 1 10 100 0 5 10 15 20 fig. 20 typical total capacitance -v , drain-source voltage (v) ds c , c a p a c i t a n c e ( p f ) c iss c rss c oss 0 4 8 12 16 20 fig. 21 typical leakage current vs. drain-source voltage -v , drain-source voltage (v) ds - i , l e a k a g e c u r r e n t ( n a ) d s s 10 100 1,000 1 t = 25c a t = 85c a t = 125c a t = 150c a 0.00001 0.001 0.01 0.1 1 10 100 1,000 fig. 22 transient thermal response t , pulse duration time (s) 1 0.0001 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t - t = p * r (t) duty cycle, d = t /t j a ja 12 ? r (t) = r(t) * ? ja r r = 260c/w ? ? ja ja p(pk) t 1 t 2 d = 0.7 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse d = 0.9 d = 0.5
dmg1016v q document number: ds 37972 rev. 2 - 2 8 of 9 www.diodes.com september 2015 ? diodes incorporated dmg1016v q new product advanced information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest ve rsion. sot - 563 dim min max typ a 0.15 0.30 0.20 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.55 0.60 0.60 l 0.10 0.30 0.20 m 0.10 0 .18 0.11 all dimensions in mm dimensions value (in mm) z 2.2 g 1.2 x 0.375 y 0.5 c1 1.7 c2 0.5 sot - 563 sot - 563 a m l b c h k g d x z y c1 c2 c2 g
dmg1016v q document number: ds 37972 rev. 2 - 2 9 of 9 www.diodes.com september 2015 ? diodes incorporated dmg1016v q new product advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corr ections or other changes without f urther notice to this document and any product described herein. diodes incorporated does not assume any liability arising ou t of the application or use of this document or any product described herein; neither does diodes incorporated convey any license u nder its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whos e products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers pu rchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, dire ctly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and mark ings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the fin al and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief exe cutive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordan ce with instruction s for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonabl y expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, an d acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstandi ng any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated pr oducts in such safety - critical, life support devices or systems. copyright ? 201 5, diodes incorporated www.diodes.com
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